Trilayer Graphene Nanoribbon Field Effect Transistor Analytical Model

The approaching scaling of Field Effect Transistors (FETs) in nanometer scale assures the smaller dimension, low-power consumption, very large computing power, low energy delay product and high density as well as high speed in processor. Trilayer graphene nanoribbon with different stacking arrangements (ABA and ABC) indicates different electrical properties. Based on this theory, ABA-stacked trilayer graphene nanoribbon application as a field effect transistor channel is investigated in this paper. The energy band structure of ABA-stacked trilayer graphene nanoribbon in the presence of a perpendicular electric field using a tight-binding model is presented and the effect of applied voltage on the curvature of the E-K graph is studied. Moreover, an analytical model of carrier statistics for ABAstacked trilayer graphene nanoribbon in corporation with a numerical solution is presented and currentvoltage characteristic of trilayer graphene nanoribbon FET as a one-dimensional device is explored. In fact, the proposed model can be applied as a useful tool to optimize the FET based device performance.